Field effect transistor (FET) made of cumulene like carbon atomic wires has been fabricated for the first time. Our proof-of-concept FET device works at room temperature, is easily fabricated by solution drop casting and paves the way for exploiting sp-carbon atomic wires as active electronic materials. The work has been published on The Journal of Chemical Physics Letters (ACS) and is the result of a collaboration between the the ERC HEROIC team of Mario Caironi at the Center for Nano Science and Technology CNST of Italian Institute of Technology IIT@POLIMI (Italy), the ERC EspLORE team at the Department of Energy of Politecnico di Milano (Italy), and the group of Rik Tykwinski at University of Alberta, Canada.
The article is available here: http://dx.doi.org/10.1021/acs.jpclett.0c00141